The Rahman-Nat diffraction on a thin laser-induced grating of the refractive index in semiconductors

摘要

Studied in this work is the Rahman-Nat diffraction on a thin grating ofudrefractive index in semiconductor, which was created by an interference pattern of twoudcoherent laser beams. Numeral calculations showed that the maximal diffractionudefficiency for the Rahman-Nat diffraction in the first order was 28.2 % for a purely phaseudgrating at its thickness z ~ 200, and 4.8 % for a purely amplitude grating. It was alsoudascertained, that waves belonging to the nearby diffraction orders differ from each otherudby π/2 in their phase.