Magnetic Resonance Study of Zinc-Related Defects in Silicon with Optimized EPR Spectrometer

摘要

The work described in the thesis can be divided into two major parts: the construction of a very sensitive electron paramagnetic resonance (EPR) spectrometer and EPR investigations with this spectrometer of silicon samples doped with zinc. In Chapter 1 the construction of the spectrometer is described where a lot of attention is paid to the noise sources and these were, where possible, removed or minimized. In Chapter 2 an overview of the electron nuclear double resonance (ENDOR) method is given. This method was not used in the investigations described in the thesis. The work on zinc-related defects starts in Chapter 3 where the early results are presented and the chemical identification of two of these centers Si:ZnCu and Si:ZnCr are given. Chapter 4 is a review of the double acceptor zinc in silicon and data like solubility, diffusion, ionization levels, and acceptor states are given. In Chapter 5 the photo-EPR method is described, which in principal can give information of the energy level, and electron (or hole) capture processes, of the paramagnetic center under study. In Chapter 6 all new paramagnetic centers, that have been found during these investigations are given in much more detail including details of the sample preparations.