Development and Characterization of Insulating Layers on Silicon Carbide: Annual Report for February 14, 1988 to February 14, 1989

摘要

Processes to fabricate metal-insulator-semiconductor (MIS) capacitors on the cubic (3C) form of silicon carbide (SiC) were studied. The insulating layers were formed from either thermally grown oxide or chemical-vapor-deposited (CVD) silicon dioxide. The effects of wet or dry oxygen and of oxidation temperatures between 1050 and 1200 C on the electrical properties of devices with thermal oxides were determined. Electrical characterization techniques appropriate for these devices on SiC were developed and applied to the fabricated capacitors. The capacitors were characterized from multiple-frequency capacitance-voltage (C-V) measurements as a function of temperature from room temperature to 300 C. The apparent interface trap level densities were estimated from the high-frequency C-V curves.