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Theory of Bound States Associated with n-Type Inversion Layers on Silicon (001) Surfaces.

机译:束缚态相关的理论与硅n型反转层(001)面。

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摘要

Binding energies are calculated as functions of electric field for several electronic bound states of impurities localized at the interface between SiO2and an n-type inversion layer on Si(001). The intensity of electron-dipole transitions and the effect of screening by free carriers are investigated.

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