High Purity Silicon Manufacturing Facility.

摘要

A pilot line production facility was established and operated. Methods of further purifying trichlorosilane, the selected feed material, were examined and purity requirements were established. Deposition, vacuum float zoning, and testing parameters and methods were determined. A significant portion of the effort was spent in an attempt to use various state-of-the-art chemical analysis techniques in solving material property problems, primarily short minority carrier lifetime, without success. The minority carrier lifetime problem was finally solved by a more regorous etch-clean procedure between float zone process steps and control of rf load-in during float zoning. A scaled-up manufacturing facility was fabricated to produce production quantities of material. The scaled-up facility was made operational, and processes were further refined to produce ultra pure high resistivity silicon. The facility and processes are described. (Author)