1.06 Micrometer Avalanche Photodiode Detectors with Integrated Circuit Preamplifiers

摘要

The development of a complete solid state 1.06μ optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short-pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low-noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in the negative-feedback“transimpedance” mode.