Determination of Impurities in Silicon Carbide by ICP AES (Inductively Coupled Plasma Atomic Emission Spectrometry) after Coprecipitation with Lanthanum Hydroxide

摘要

Sample decomposition and a method to separate impurities from a matrix are examined to identify the impurities in silicon carbide powder by ICP AES. This method made it possible to determine fifteen elements such as aluminum, iron, which are among the major impurities found in silicon carbide.