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METAL-OXIDE SEMICONDUCTOR STABILITY STUDIES - CAPACITANCE-VOLTAGE MEASUREMENTS FINAL REPORT

机译：金属氧化物半导体稳定性研究 - 电容 - 电压测量最终报告

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ELECTROPHYSICAL INSTABILITIES OF METAL OXIDE SEMICONDUCTORS DETERMINED BY CAPACITANCE-VOLTAGE CURVE ANALYSIS

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年度 1965
页码 1-51
总页数 51
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL PROPERTIES; ELECTROPHYSICS; METAL OXIDE SEMICONDUCTORS; STABILITY; CAPACITANCE; ELECTRIC PROPERTY; METAL OXIDE SEMICONDUCTOR /MOS/;

机译：电容 - 电压特性;电气特性;获得电子;金属氧化物半导体;稳定性;电容;电力;金属氧化物半导体/ mOs /;

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专利

1. Forward bias capacitance-voltage measurements on semiconductors using co-planar ohmic and Schottky contacts in a cylindrical geometry [J] . Victor-Tapio Rangel-Kuoppa, Markku Sopanen, Harri Lipsanen Journal of nano research . 2010,第期

机译：使用圆柱面几何形状的共面欧姆接触和肖特基接触对半导体进行正向偏置电容-电压测量
2. Study on Stability of Pentacene-Based Metal-Oxide-Semiconductor Diodes in Air Using Capacitance-Voltage Characteristics [J] . Md. Akhtaruzzaman, Shun-lchiro Ohmi, Jun-ichi Nishida, Japanese journal of applied physics . 2009,第4issue2期

机译：基于电容-电压特性的并五苯金属氧化物半导体二极管在空气中的稳定性研究
3. Capacitance-voltage measurements of monolayer MoS_2 metal-oxide-semiconductor capacitors [J] . Yang Hae In, Choi Woong Microelectronic Engineering . 2021,第Feba期

机译：单层MOS_2金属氧化物半导体电容器的电容 - 电压测量
4. Study and Simulation of the Model of Stability Measurement for Integrated Semiconductor Equipment [C] . Xue Fang, Wang Haifei International Conference on Materials Science and Information Technology . 2013

机译：集成半导体设备稳定性测量模型的研究与仿真
5. Numerical extraction of metal-oxide-semiconductor doping profiles from capacitance-voltage measurements [D] . Osse, Antonio Luiz de Menezes 1993

机译：从电容电压测量中数值提取金属氧化物半导体掺杂分布
6. Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements [O] . J. Tao, C.Z. Zhao, C. Zhao, 2012

机译：电容电压测量中高k材料的固有和固有频率色散
7. Development of XRMF techniques for measurement of multi-layer film thicknesses on semiconductors for VLSI and ULSI integrated circuits. Final CRADA report for CRADA number Y-1292-0130 [O] . Carpenter, D.A., Golijanin, D.L., Wherry, D. 1997

机译：开发用于测量VLsI和ULsI集成电路半导体多层膜厚度的XRmF技术。 CRaDa编号Y-1292-0130的最终CRaDa报告

METAL-OXIDE SEMICONDUCTOR STABILITY STUDIES - CAPACITANCE-VOLTAGE MEASUREMENTS FINAL REPORT

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