首页> 美国政府科技报告 >THEORETICAL AND EXPERIMENTAL STUDIES OF RADIATION-INDUCED DAMAGE TO SEMICONDUCTOR SURFACES AND THE EFFECTS OF THIS DAMAGE ON SEMICONDUCTOR DEVICE PERFORMANCE SEMIANNUAL PROGRESS REPORT NO. 4, 1 SEP. 1965 - 28 FEB. 1966

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THEORETICAL AND EXPERIMENTAL STUDIES OF RADIATION-INDUCED DAMAGE TO SEMICONDUCTOR SURFACES AND THE EFFECTS OF THIS DAMAGE ON SEMICONDUCTOR DEVICE PERFORMANCE SEMIANNUAL PROGRESS REPORT NO. 4, 1 SEP. 1965 - 28 FEB. 1966

机译：辐射对半导体表面损伤的理论和实验研究及其损害对半导体器件性能的影响半年度进展报告4，1 sEp。 1965 - 28年2月28日。 1966年

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EXPERIMENTAL STUDIES ON SEMICONDUCTOR SURFACE RECOMBINATION VELOCITY, METAL OXIDE SEMICONDUCTOR CAPACITORS, AND DEEP LYING CENTERS IN GERMANIUM

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年度 1966
页码 1-40
总页数 40
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
CAPACITORS; DAMAGE; GERMANIUM; METAL OXIDE SEMICONDUCTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTORS (MATERIALS); CAPACITOR; GERMANIUM; METAL OXIDE SEMICONDUCTOR /MOS/; RECOMBINATION; SEMICONDUCTOR DEVICE;

机译：电容器;损伤;锗;金属氧化物半导体;半导体器件;半导体（材料）;电容器;锗;金属氧化物半导体/ mOs /;重组;半导体器件;

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THEORETICAL AND EXPERIMENTAL STUDIES OF RADIATION-INDUCED DAMAGE TO SEMICONDUCTOR SURFACES AND THE EFFECTS OF THIS DAMAGE ON SEMICONDUCTOR DEVICE PERFORMANCE SEMIANNUAL PROGRESS REPORT NO. 4, 1 SEP. 1965 - 28 FEB. 1966

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