Low noise monolithic Si JFETs for operation in the 90-300K Range and in high radiation environments

摘要

Development of low noise preamplifters for large ionization chambers with liquid argon (LAr) and liquid krypton (LKr) used in high energy physics experiments for measurement of energy of charged particles and photons requires the choice of a technology able to withstand the environment: a temperature of 90 K -120 K; an ionizing radiation dose of 1-2 Mrad; a neutron fluence of 0.5 -1.10(sup 14)n/cm(sup 2). Silicon JFETs by virtue of their reliable noise behavior and their intrinsic radiation hardness appear to be very suitable devices for applications both at room and cryogenic temperatures. We describe the noise properties of JFET devices and a monolithic preamplifier suitable for amplification of charge and current signals.