Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end element

摘要

The noise behavior of monolithic preamplifiers using JFETs as input elements has been investigated on a broad temperature range, from room temperature down to 77 K. The preamplifiers under study are charge integrators intended for use with radiation detectors. The parameter of dominant interest in the analysis is the equivalent noise charge (ENC). The investigation addresses tow issues. One is the ENC dependence on temperature. The other one is the extent to which ENC is affected when the preamplifiers are irradiated in cryogenic conditions.