Advanced growth and surface analysis system for in situ studies of interface formation. Annual technical report

摘要

This is the first annual report for developing an advanced integrated in situ UHV growth/analysis system for synchrotron radiation studies of interface and surface reactions which lead to epitaxial structures on Si, Ge, and Si(sub 1(minus)x)Ge(sub x) alloys. This equipment will allow one to use techniques based on synchrotron radiation, such as photoemission, x-ray standing wave (XSW), and surface x-ray absorption spectroscopy (SXAFS) to determining the electronic states and atomic configurations of surfaces in metal-silicon, metal-germanium and metal-silicon-germanium alloys. Since the award of the contract the authors have completed a detailed design of the overall system, identified commercially available equipment which fits the requirements and have purchased or ordered all of this equipment. They have also custom designed a considerable amount of equipment which is not available commercially because of the special requirements. This includes both of the UHV chambers, sample manipulators, and a mobile support stand. In this report, they will describe the design and purchase status of the system. An overview of the equipment purchase status is given in Appendix 1. The details of their custom designed growth and analytical chambers are given in Appendix 2.