GaAs integrated circuit process characterization and non-destructive process monitoring by atomic force microscopy

摘要

We report a new application of atomic force microscopy (AFM) for process characterization of GaAs integrated circuit fabrication. By using the near atomic-level z-resolution of AFM, we are able to gain information not available by other imaging techniques in a number of steps in the sequence for GaAs IC fabrication. A nondestructive method of determining whether micron-sized vias have been etched to completion is presented. In addition, the AFM has been used to evaluate material removal following several of fabrication steps. Shallow trench formation occurs as a result of GaAs removal during the sidewall etch for a commonly used sidewall spacer process. This effect has been not been observed previously by other techniques. Other examples of unintentional removal of small amounts of GaAs during shallow wet and dry etches are presented. These examples show the utility of AFM as an in-line process characterization tool.