Interface states in stressed semiconductor heterojunction with antiferromagnetic ordering

摘要

The stressed heterojunctions with antiferromagnetic ordering in which the constituents have opposite band edge symmetry and their gaps have opposite signs have been investigated. The interface states have been shown to appear in these heterojunctions and they are spin-split. As a result if the Fermi level gets into one of the interface bands then it leads to magnetic ordering in the interface plane. That is if the interface magnetization effect can be observed. (author). 14 refs, 2 figs. (Atomindex citation 26:078899)