Mechanisms of iron gettering in silicon by boron ion-implantation

摘要

Understanding and controlling gettering will become more important to future device technologies. In this work the authors show that regions of high B concentrations are particularly effective gettering agents. This behavior can be entirely understood in terms of Fermi-level-enhanced pairing reactions between Fe and B which becomes operative at temperatures less than 600 C. Such quantitative understanding could have significance for the development of more efficient gettering protocols.