Nanometer-Scale Compositional Structure in III-V Semiconductor Heterostructures Characterized by Scanning Tunneling Microscopy; Journal of Vacuum Science Technology A

摘要

Nanometer-scale compositional structure in some indium arsenic phosphides/indium arsenides grown by gas-source molecular-beam epitaxy and in some indium arsenic phosphides/indium arsenides heterostructures grown by metal-organic chemical vapor deposition has been characterized using cross-sectional scanning tunneling microscopy. InAsxP(1-x) alloy layers are found to contain As-rich and P-rich clusters with boundaries formed preferentially within (111) and (111) crystal planes. Similar compositional structure is observed within InNYAsxP(1-x-Y) alloy layers. Instances are observed of compositional structure correlated across a heterojunction interface, with regions whose composition corresponds to a smaller unstrained lattice, constant relative to the surrounding alloy material appearing to propagate across the interface.