GaAs Self-Aligned JFETS with Carbon-Doped P+ Region

摘要

Self-aligned JFETs with a carbon-doped p+ region have been reported for the first time. For these JFETs, both the channel and p+ region were grown by metal organic chemical vapor deposition (MOCVD) and are termed epitaxial JFETs in this study. The epitaxial JFETs were compared to ion implanted JFETs of similar channel doping and threshold voltage. Both JFETs were fabricated using the same self-aligned process for doping the source and drain regions of the JFET and for eliminating excess gate capacitance of conventional JFETs. The gate turn-on voltage for the epitaxial JFETs was 1.06 V, about 0.1 V higher than for the implanted JFETs. The reverse breakdown voltage was similar for both JEFTs but the reverse gate leakage current of the epitaxial JFETs was 1-3 orders of magnitude less than the implanted JFETs. The epitaxial JFETs also showed higher transconductance and lower knee voltage than the implanted JFETs.