GaN pnp bipolar junction transistors operated to 250 C

摘要

The authors report on the dc performance of the first GaN pnp bipolar junction transistor. The structure was grown by MOCVD on c-plane sapphire substrates and mesas formed by low damage Inductively Coupled Plasma etching with a Cl(sub 2)/Ar chemistry. The dc characteristics were measured up to V(sub BC) of 65 V in common base mode and at temperatures up to 250 C. Under all conditions, I(sub C) (approximately) I(sub E), indicating higher emitter injection efficiency. The offset voltage was (le) 2 V and devices were operated up to power densities of 40kW(center(underscore)dot)cm(sup (minus)2).