Spin-Resolved Electronic Structure of Ultrathin Epitaxial Fe Films on Vicinal and Singular GaAs(100) Substrates

摘要

Recently there has been considerable interest in the study of spin injection at ferromagnetic semiconductor heterojunctions and ferromagnetic metal--semiconductor contacts. Studies of ntype semiconductors have demonstrated spin-coherent transport over large distances5 and the persistence of spin coherence over a sizeable time scale. Clearly such investigations have been stimulated by the potential of the development of ''spintronics'', electronic devices utilizing the information of the electron spin states. To understand and improve the magnetic properties of ultrathin Fe films on GaAs has been the aim of many research groups over recent years. The interest in this system has both technological and fundamental scientific motivations. Technologically, Fe on GaAs may serve to realize spin electronic devices. From a fundamental science point of view, Fe on GaAs serves as a prototype for studies of the interplay between the crystalline structure and morphology of an ultrathin film, its electronic structure and the long range magnetic order it exhibits. Furthermore, it is well known that an oxidized Cs layer on GaAs substantially alters the work-function of the GaAs surface, which plays a very important role in the application of GaAs as a spin polarized electron source.