Vibrational and Electronic Spectroscopy of Ion-Implantation-Induced Defects in Fused Silica and Crystalline Quartz

摘要

Defects produced by implantation of various atomic species in fused and crystalline SiO sub 2 were studied using infrared reflection spectroscopy (IRS) with UV-visible spectroscopy. We observe a new vibrational band at 830 cm exp -1 which is tentatively associated with the creation of two nonbridging O atoms in SiO sub 4 units. Numerous chemical effects were also observed, including evidence for chemical incorporation of Li and anomalously large O-vacancy production for Al exp + , B exp + and Si exp + implantation. (ERA citation 03:043331)