Vector-Potential Flow in Relativistic Beam Diodes

摘要

Analytic theory, numerical simulations and experiments indicate that a combination of a bias current pinch and an ion induced pinch may allow the efficient pinching of electron beams generated in large aspect ratio diodes. In the new diode geometry, electrons flow radially inward along vector-potential field lines which lie close to the anode. As these electrons do not touch the anode, there is no plasma formation and consequent loss of energy to accelerated ions. Entering a region close to the axis in which an anode plasma does exit, these electrons undergo an ion induced pinch to still smaller radii. Since the bulk of the flow occurs along vector-potential field lines, we have coined this new diode the Paravector-potential diode. (ERA citation 05:035816)