Photon-Response Spectrum of Surface Barrier Diodes on GaAssub(1-X)Psub(X) Mixed Crystals

摘要

Surface barrier diodes have been prepared by chemical deposition of thin gold film on samples of GaAssub(1-x)Psub(x) with x=0.3. The spectrum of the photo-response over a spectral range covering the photo-injection from the metal and the intrinsic absorption regions of the semiconductor has been measured. From the photo-threshold corresponding to each region, the height of the energy barrier and the forbidden gap width of the semiconductor have been determined and are found to be 0.96 e.v. and 1.78 e.v. respectively for the investigated composition. (Atomindex citation 13:713706)