High Resolution Study of the Relationship Between Misfit Accommodation and Growth of Cu/sub 2-X/ in CdS

摘要

The growth of Cu/sub 2-x/ in the (0001) basal face of single crystal cadmium sulfide has been studied with high resolution transmission electron microscopy (HRTEM) and diffraction. Cross-sectional Cu/sub 2-x/S/CdS specimens and plan-view Cu/sub 2-x/S separated films were prepared from heterojunctions formed by the aqueous conversion of CdS to topotaxial Cu/sub 2-x/S. Low chalcocite films were found to form in two principal stages: (1) coalescence of low chalcocite islands; and (2) an accelerated reaction localized at pores in the Cu/sub 2-x/S film. Several possible misfit accommodation mechanisms involving twinning, cracking, and a second copper sulfide phase were identified. (ERA citation 09:008067)