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Revisiting the Al/Al2O3 Interface: Coherent Interfaces and Misfit Accommodation

机译:回顾Al / Al2O3接口:相干接口和不当配合

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摘要

We study the coherent and semi-coherent Al/α-Al2O3 interfaces using molecular dynamics simulations with a mixed, metallic-ionic atomistic model. For the coherent interfaces, both Al-terminated and O-terminated nonstoichiometric interfaces have been studied and their relative stability has been established. To understand the misfit accommodation at the semi-coherent interface, a 1-dimensional (1D) misfit dislocation model and a 2-dimensional (2D) dislocation network model have been studied. For the latter case, our analysis reveals an interface dislocation structure with a network of three sets of parallel dislocations, each with pure-edge character, giving rise to a pattern of coherent and stacking-fault-like regions at the interface. Structural relaxation at elevated temperatures leads to a further change of the dislocation pattern, which can be understood in terms of a competition between the stacking fault energy and the dislocation interaction energy at the interface. Our results are expected to serve as an input for the subsequent dislocation dynamics models to understand and predict the macroscopic mechanical behavior of Al/α-Al2O3 composite heterostructures.
机译:我们使用带有混合的金属离子原子模型的分子动力学模拟研究相干和半相干的Al /α-Al2O3界面。对于相干界面,已经研究了Al端和O端非化学计量界面,并建立了它们的相对稳定性。为了理解在半相干界面处的失配适应,已经研究了一维(1D)失配模型和二维(2D)错位网络模型。对于后一种情况,我们的分析揭示了具有三组平行位错的网络的界面位错结构,每组平行位错均具有纯边缘特征,从而在界面处产生了相干且类似堆垛层错的区域。高温下的结构弛豫导致位错模式的进一步变化,这可以从堆垛层错能与界面处的位错相互作用能之间的竞争来理解。我们的结果有望作为后续位错动力学模型的输入,以了解和预测Al /α-Al2O3复合异质结构的宏观力学行为。

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