Studies of Chemical Vapor Deposition of Amorphous Silicon and Transparent Electrodes for Solar Cells. Final Report, 1 April 1983-30 September 1984

摘要

This report presents results of research on atmospheric-pressure chemical vapor deposition (APCVD), a promising alternative deposition technique for preparing hydrogenated amorphous silicon for use in thin-film solar cells and for preparing transparent conductive electrode layers. The lack of ion bombardment, the observed high deposition rates, and the overall simplicity of the technology could mean a sizable cost reduction in the large-scale manufacturing of amorphous silicon solar cells. Solar cells with at least 8% efficiency should be possible with APCVD amorphous silicon. Titanium nitride films produced by APCVD were shown to provide low-resistance electrical contact to tin oxide and also to highly doped silicon (both p and n-type, crystalline and amorphous). (ERA citation 10:046325)