(Stability of Amorphous Metal Films on Semiconductor Substrates)

摘要

In the culmination of work which began in June 1984, goals of this research have been as follows: Investigation of the stability of amorphous alloys films during diffusion and interdiffusion treatments. The atomic transport measurements will be conducted by a combination of RBS and AES techniques as explained in earlier reports. X-ray diffraction and transmission electron microscopy will be used for structural examination. Investigation of the electrical behavior of amorphous metal/semiconductor contacts, including both the interfacial electrical (Schottky barrier and Ohmic) behavior and the stability of the amorphous metallization against current-induced degradation by electromigration. Fundamental studies of the electromigration process itself will be conducted in this broader context. Examination of structural relaxation during post-depression annealing. (ERA citation 13:046762)