(a) an amorphous support;      on which there are deposited, in succession:(b) a metal layer;(c) a luminescent layer;(d) an insulating layer; and(e) a conductor layer; - with said (b) metal layer being a homogeneous layer of a binary alloy of two different metals, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or higher than, 0.2 µm;- said (c) luminescent layer being a zinc sulphide or zinc selenide layer, doped with manganese metal, with manganese sulphide, or with another manganese salt, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or lower than, 2 µm.;Said device is manufactured by means of a process which comprises:- the deposition, on an amorphous support of a layer of a first metal, in order to form a metal layer having an either amorphous or microcrystalline structure;- the deposition on the first metal layer of a second metal, melting at a lower temperature than the first metal, by operating under temperature conditions within which the first metal gradually melts in the form of a liquid alloy with the second metal, and crystallizes in the form of a binary and homogeneous solid alloy, in order to form a metal layer having a multicrystal structure;- the deposition, on the so-formed multicrystal metal layer, of the luminescent layer, and its epitaxial or quasi-rheotaxial growth, in order to form a multicrystal luminescent layer;- the finishing of the device by means of the deposition, in succession, of an insulating layer, and of a transparent conductive layer."/> Process for preparing thin films of crystalline metals or semiconductors on amorphous substrates, and thin-film electroluminescent device obtainable by means of such a process
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Process for preparing thin films of crystalline metals or semiconductors on amorphous substrates, and thin-film electroluminescent device obtainable by means of such a process

机译:在非晶态衬底上制备晶体金属或半导体薄膜的方法,以及通过这种方法可获得的薄膜电致发光器件

摘要

A thin-film electroluminescent device, endowed with good electro-optical characteristics and with a threshold voltage for electroluminescence generally lower than 100 V, comprises:(a) an amorphous support;      on which there are deposited, in succession:(b) a metal layer;(c) a luminescent layer;(d) an insulating layer; and(e) a conductor layer; - with said (b) metal layer being a homogeneous layer of a binary alloy of two different metals, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or higher than, 0.2 µm;- said (c) luminescent layer being a zinc sulphide or zinc selenide layer, doped with manganese metal, with manganese sulphide, or with another manganese salt, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or lower than, 2 µm.;Said device is manufactured by means of a process which comprises:- the deposition, on an amorphous support of a layer of a first metal, in order to form a metal layer having an either amorphous or microcrystalline structure;- the deposition on the first metal layer of a second metal, melting at a lower temperature than the first metal, by operating under temperature conditions within which the first metal gradually melts in the form of a liquid alloy with the second metal, and crystallizes in the form of a binary and homogeneous solid alloy, in order to form a metal layer having a multicrystal structure;- the deposition, on the so-formed multicrystal metal layer, of the luminescent layer, and its epitaxial or quasi-rheotaxial growth, in order to form a multicrystal luminescent layer;- the finishing of the device by means of the deposition, in succession, of an insulating layer, and of a transparent conductive layer.
机译:一种薄膜电致发光器件,其具有良好的电光特性并具有通常低于100 V的电致发光阈值电压,包括: (a)无定形支持;在其上连续沉积的金属: (b)金属层; (c)发光层; (d)绝缘层; (e)导体层;以及(b)金属层是两种不同金属的二元合金的均质层,具有多晶结构,并且柱状(板状)晶粒,其侧面尺寸等于或大于1 µm,厚度等于或大于0.2 µm;-所述(c)发光层是硫化锌或硒化锌层,掺杂有锰金属,硫化锰或另一种<!-EPO ->锰盐,并具有多晶结构,具有侧面尺寸等于或大于1μm且厚度等于或小于2μm的柱状(平板)晶粒;所述装置是通过以下方法制造的:-在第一金属层的非晶态载体上的沉积,以形成具有非晶态或微晶结构的金属层;-通过在一定温度条件下操作而在比第一金属更低的温度下熔化的第二金属在第一金属层上的沉积,在该温度条件下第一金属与第二金属以液态合金的形式逐渐熔化并结晶。二元且均质的固态合金的形式,以形成具有多晶结构的金属层;-在如此形成的多晶金属层上沉积发光层,并进行外延或准外延生长,以形成多晶发光层;-通过依次沉积绝缘层和透明导电层来完成装置的精加工。

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