- with said (b) metal layer being a homogeneous layer of a binary alloy of two different metals, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or higher than, 0.2 µm;- said (c) luminescent layer being a zinc sulphide or zinc selenide layer, doped with manganese metal, with manganese sulphide, or with another manganese salt, with a multicrystal structure, with columnar (tabular) grains with side dimensions equal to, or larger than, 1 µm, and with a thickness equal to, or lower than, 2 µm.;Said device is manufactured by means of a process which comprises:- the deposition, on an amorphous support of a layer of a first metal, in order to form a metal layer having an either amorphous or microcrystalline structure;- the deposition on the first metal layer of a second metal, melting at a lower temperature than the first metal, by operating under temperature conditions within which the first metal gradually melts in the form of a liquid alloy with the second metal, and crystallizes in the form of a binary and homogeneous solid alloy, in order to form a metal layer having a multicrystal structure;- the deposition, on the so-formed multicrystal metal layer, of the luminescent layer, and its epitaxial or quasi-rheotaxial growth, in order to form a multicrystal luminescent layer;- the finishing of the device by means of the deposition, in succession, of an insulating layer, and of a transparent conductive layer."/>
公开/公告号EP0297644A2
专利类型
公开/公告日1989-01-04
原文格式PDF
申请/专利号EP19880201182
申请日1988-06-09
分类号H05B33/10;C23C14/34;H01L21/20;C23C14/14;
国家 EP
入库时间 2022-08-22 06:34:34