Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices.

摘要

Defects present in GaAs on Si(211) heteroepitaxial layers grown by MBE have been analyzed in detail by TEM. Efficient reduction of dislocation propagation by strained layer superlattices was found. The mechanisms of defect reduction were suggested based on Burgers vector analysis. It was shown that additional threading dislocations can glide into the epilayer during cooling process and that misfit dislocations at the interface can be forced to dissociate on a 111 plane inclined to the interface leaving one partial dislocation at the interface and forming extended stacking faults. 15 refs., 7 figs. (ERA citation 14:008387)