WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS FOR DEFECT PROPAGATION CONTROL IN SILICON CMOS-COMPATIBLE SEMICONDUCTOR DEVICES

摘要

III-N semiconductor heterostructures including raised III-N semiconductor structures having inclined sidewall facets are described. In embodiments, lateral epitaxial overgrowth favoring semi-polar oblique sidewall facets is used to bend crystal defects from vertical to horizontal propagation. In embodiments, any large merged III-N semiconductor structures having low defect density surfaces may be overgrown from trenches exposing the (100) surface of the silicon substrate. III-N devices, such as III-N transistors, may be further formed on elevated III-N semiconductor structures, and silicon-based transistors may be formed in different regions of the silicon substrate.