Diffusion, segregation, and recrystallization in high-dose ion-implanted Si.

摘要

Using the new technique of Z-contrast scanning transmission electron microscopy (STEM), we have been able to study the segregation of Sb at an advancing SPE growth interface and the resulting interface breakdown. The first direct information is obtained on Sb diffusion in the amorphous phase, which is many orders of magnitude enhanced over tracer crystalline values. This controls both the dopant incorporation and the stability of the resulting supersaturated alloy. These results are compared to the behavior of the low melting point substitutional diffusers and the interstitial diffusers. 23 refs., 8 figs.