Strain enhanced electron spin polarization observed in photoemision from InGaAs.

摘要

Electron spin polarization in excess of 70% has been observed in photoemission from a 0.1 (mu)m-thick epitaxial layer of In(sub x)Ga(sub 1-x)As with x (approx) 0.13 grown on a GaAs substrate. Under these conditions, the epitaxial layer is expected to be h ...