Ion implantation and dynamic recovery of tin-doped indium oxide films.

摘要

The effect of O(sup +) on implantation on the electronic (carrier density, mobility), resistivity and microstructural properties of thin film Sn-doped In(sub 2)O(sub 3) (ITO) was studied. Both polycrystalline (c-) and amorphous (a-) ITO thin films, 200 nm thick, were implanted at substrate temperatures ranging from (minus)196 to 300(degrees) C with 80 keV O(sup +) at doses ranging from 0 to 4.0(times)10(sup 15) cm(sup (minus)2). X-ray diffraction studies show that polycrystalline ITO remains crystalline even after implantation with 80 keV O(sup +) at (minus)196(degrees)C to a dose of 4.0(times)10(sup 15) cm(sup (minus)2) which suggests that dynamic recovery processes are active in ITO at this low temperature. Although the x-ray diffraction pattern of the polycrystalline ITO remains unchanged with implant dose, the electrical properties were seen to degrade when implanted to a dose of 1.0(times)10(sup 15)cm(sup (minus)2) below 200(degrees)C. In contrast, amorphous ITO films remains amorphous upon ion implantation and shows almost no degradation in resistivity when implanted below 16(degrees)C. The recrystallization temperature of amorphous ITO is about 150(degrees)C in the absence of ion implantation.