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Synthesis of tin oxide, indium oxide and tin-doped indium oxide nanowires by chemical vapor deposition

机译:化学气相沉积法合成氧化锡,氧化铟和掺锡氧化铟纳米线

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摘要

Nanostructures of the tin oxide, indium oxide and tin-doped indium oxide have been fabricated on silicon by chemical vapor deposition from a mixture of metal oxide nanoparticles and single-wall carbon nanotubes (SWCNT). Different ratios of the metal oxide to SWCNT have been used. It was found that the morphology of the nanostructures depends on the substrate temperature. The morphology, growth direction and optical properties have been studied by scanning electron microscopy, transmission electron microscopy and photoluminescence spectroscopy.
机译:氧化锡,氧化铟和掺杂锡的氧化铟的纳米结构已经通过化学气相沉积法从金属氧化物纳米颗粒和单壁碳纳米管(SWCNT)的混合物上制造在硅上。已经使用了金属氧化物与SWCNT的不同比例。发现纳米结构的形态取决于衬底温度。通过扫描电子显微镜,透射电子显微镜和光致发光光谱学研究了形态,生长方向和光学性质。

著录项

  • 来源
    《Nanophotonic materials VIII》|2011年|p.80940P.1-80940P.9|共9页
  • 会议地点 San Diego CA(US)
  • 作者单位

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong;

    Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 玻璃、陶瓷;
  • 关键词

    metal oxides; nanowires; chemical vapor deposition;

    机译:金属氧化物纳米线;化学气相沉积;

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