Changes in electrical device characteristics during the formation of dislocations in situ in the TEM

摘要

By adding electrical connections to a specimen heating holder for a transmission electron microscope, we have measured the characteristics of electronic devices such as diodes while they remain under observation in the microscope. We have made electron-transparent specimens from metastable GeSi/Si p-n junction diodes and introduced dislocations by heating in situ. The combination of electrical measurement and real-time observation of dislocation formation allows us to examine the electrical properties of dislocations in individual devices and the influence of defects on device performance.