Biomaterial-based Memory Device Development by Conducting Metallic DNA.

摘要

In this report a simple two terminal conducting DNA device was developed. This device exhibit the negative differential resistance (NDR) effect at room temperature. Moreover, we found the conductivity of this device could be affected by the history of the bias applied previously. By systematically studies, we found that both conducting and memory effect can be attribute to the redox reaction of Ni ions in the DNA nano-wire. Moreover, the redox state of Ni ions in DNA can change the resistance of Ni-DNA by applying different polar bias and time. Therefore, we have created a multiple-states memory system. This is the first multi-states resistance memory device by using bio-nanowire of the world. Based on this achievement, logic device and application will be developed in the near future, too. Moreover, by using Ni- DNA detection system, the protein-DNA interaction can be detected.