High Density Low Power RTD/HBT and RTD/HFET Technologies for High Speed Computing

摘要

This program is directed towards the monolithic integration of resonant tunnelingdiodes (RTDs) and conventional heterostructure transistors, and the demonstration of high speed, low power, high functional-density circuits. This effort was carried out in close collaboration with MIT Lincoln Laboratory (LL). This team demonstrated lattice mismatched InGaAs/AlAs RTDs with high peak to valley current ratio (PVCR) and high current density capability, integrated with AlGaAs/Ga-As-based heterojunction bipolar transistors (HBTs) and hetero-structure field effect transistors (HFETs). We explored by simulation and experiment several novel digital integrated circuit approaches, based on this technology.