Ninth International Conference on Superlattices, Microstructures andMicrodevices, Liege, Belgium, July 14-19, 1996

摘要

Superconductor - semiconductor contacts; Induced superconductivity in InAsquantum wells with superconducting contacts; Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structure; Intersubband processes in quantum wells and superlattices; Interminiband electroluminescence and laser action in semiconductor superlattices; Optically pumped mid-infrared intersubband emission and lasing in coupled quantum; Intersubband scattering rates in GaAs quantum wells, measured by femtosecond luminescence; Mid-infrared femtosecond spectroscopy of intersubband hot carrier relaxation in quantum wells; Energy relaxation of hot electrons in GaAs/AlGaAs superlattices measured by infrared differential spectroscopy; Quasistatic and dynamic interaction of high-frequency fields and miniband electrons semiconductor superlattice and intraminiband relaxation; Electronic and optical properties of quantum wells and superlattices; Electron-hole hybridizing in InAs single quantum wells clad with GaSb; Coupled utltrathin InAs layers in GaAs as a tool for the determination of band offsets; Quasibound states induced by AlAs monolayers in (In,Ga)As/GaAs quantum wells.