Simultaneous Time, Wavelength and Intensity Measurement of Optical Memory Subsystems

摘要

This study showed that in WO3, there are plenty of defect states available to undergo transitions at 532 nm. We proved that the 1.06 micrometers is acting mostly as heat, not as a transition source. We found it may be possible to work the system at the power density level of 650 microW/sq micrometers (532 micrometers) and 520 microW/sq micrometers (1.06 micrometers). Although the worst case of our Raman noise experiments showed a 19% standard deviation, this is still a much better signal to noise ratio than any current optical recording read. Our Raman spot size study, in cooperation with STM studies at Bates College, showed: (a) the distribution of Raman scattering centers on the surface of common WO3 is spatially uniform, (b) the density of defects scales as the square of the lateral extent of the observed region as does the topographical surface area and, (c) at the power densities employed and the amount of oxygen substoichiometry employed, there appears to be little cooperativity between the chemistry occurring at different defect centers.