Synthesis and engineering of diamond for nanoelectronics, photonics, and quantum information processing.

摘要

We report a nitrogen delta-doping technique to engineer monolayer planes of spin in single crystal diamond films. Isotopically pure 15N2 gas is briefly introduced to form a thin N-doped layer (1-2 nm thick) during chemical vapor deposition of a diamond film. Post growth electron irradiation creates vacancies and subsequent annealing forms nitrogen-vacancy centers (NV)s while mitigating the crystal damage. We identified doped NVs by the characteristic hyperfine signature of the rare 15N isotope in electron spin resonance measurements. We confirm the doped NV depth dispersion is less than 4 nm by doping NVs in the 12C layer of an isotopically engineered 13C/12C/13C layer structure and probing the coupling between the doped NVs and the 13C nuclear spins. Furthermore, using a second Carbon ion-implantation technique, spins have been formed a few nanometers from the surface while preserving the coherence times in excess of 750 microseconds at room temperature. These spin- engineered quantum states have been used both to probe the local crystal strain, as well as serve as sensors for local electric, magnetic, and thermal fields using both electronic and optical control schemes.