Synthesis and Characteristics of HgCdSe for IR Detection

摘要

Techniques were developed for producing epitaxial layers of ZnTe1-x Sex that are lattice-matched to GaSb substrates for use as buffer layers for Hg1-xCdxSe IR-detection layers. Dislocation density values of 7 X 104 cm-2 are obtained from confocal photoluminescence images of the ZnTe1-x Sex layers. Techniques were developed for producing epitaxial layers of Hg 1-xCdxSe with x- values appropriate for optical absorption in the MWIR and LWIR spectral regions. Background carrier concentration values as low as 8 x 1015 cm-3 were achieved in LWIR with promising excess carrier lifetimes. IR Cathodoluminescence was demonstrated to 5.5 micrometer.