High-temperature Superconductivity in Diamond Films - from Fundamentals to Device Applications.

摘要

The specific aims of the research (as proposed in the original grant application) are: (i) to test the hypotheses that repeated implants of boron in diamond below the graphitization limit (followed by high-temperature annealing) can increase the carrier density in the buried layer to levels required for the occurrence of superconductivity; (ii) the demonstration of superconductivity in a (repeatedly) boron-implanted and annealed diamond crystal in our dilution refrigerator, after which; (iii) we will implement a superconducting quantum interference device (SQUID). The ultimate goal of the work is to develop the technology and expertise to create robust, superconducting devices in diamond that can operate in high-magnetic fields and relatively high temperatures (Tc >> 11 K according to the theory of M.L. Cohen for a fractional boron concentration of 30%), c.f. Fig. 1. Further benefits of this research may be found in the high-frequency operation of such devices in environmentally harsh environments such as space. The work presented here is essentially a feasibility study for the existence of high-Tc diamond superconductors based on B-implantation followed by new techniques for the annealing of damage.