Intersubband Photoconduction in CdTe/DcS and CdTe/CdSe Nanowires

摘要

The aim of the project is the theoretical analysis of intersubband IR detection in semiconductor nanowires and the nonlithographic fabrication and the structural, optical and electrical characterization of II-VI semiconductor nanowires and II-VI/II-VI semiconductor nanowire heterostructures. Significant progress has been made on the theoretical analysis and fabrication portions of the project. The theory has used both analytical and finite difference algorithms and has shown that the method of fabricating the nanowires is capable of producing the necessary small diameters of the nanowires. CdSe/CdTe nanowires and CdSe/Zn1-xCdxSe are shown to be possible and will be able to detect near, mid and long wavelength IR radiation. The electron subband states and the absorption in the IR spectral range due to intersubband transitions has been calculated. The surface optical and longitudinal optical phonon modes have been calculated and the proper quantization procedure has been developed. Electron-phonon scattering has been investigated and high temperature operation has been investigated. The development of the nanotemplate has been completed and thin films of II-VI semiconductors and II-VI nanowires has started and some optical and structural characterization has been performed.