Integrated Silicon Optical Receiver with Avalanche Photodiode

摘要

An optical receiver consisting of an avalanche photodiode integrated with a trans-impedance amplifier is reported. The optical receiver was fabricated on a 2 micrometers thick SOI substrate in a 130 nm unmodified CMOS process flow. the unity gain external quantum efficiency of the photodetectors was approximately 10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted or 5 dB improvement in receiver Sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.