Fabrication and Characterization of Electric Field - Induced Resistive Sensor at the end of Scanning Probe Tip

摘要

Fabrication and Characterization of Electrical Field were investigated to develop induced Resistive Sensor at the end of Scanning Probe Tip. The measurement and visual observation of doping profile were performed on Kelvin Prove Force Microscopy (KPFM) & Scanning Nonlinear Dielectric Microscopy (SNDM). NiO Film was fabricated and characterized for Memory Switching applications. Last, effects of Surface Treatment on Work Function & in-plane conductivity of ITO (Indium Tin Oxide) Thin Films were also investigated.