首页> 外国专利> PROBE OF SCANNING PROBE MICROSCOPE HAVING A FIELD EFFECT TRANSISTOR CHANNEL AND FABRICATION METHOD THEREOF

PROBE OF SCANNING PROBE MICROSCOPE HAVING A FIELD EFFECT TRANSISTOR CHANNEL AND FABRICATION METHOD THEREOF

机译:具有场效应晶体管通道的扫描探针显微探针及其制备方法

摘要

A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.
机译:通过制造平面型场效应晶体管并在平面型场效应晶体管上制造导电碳纳米管,具有尖锐的尖端和增强的电特性的扫描探针显微镜的探针。为了实现这一点,本发明提供了一种用于制造具有场效应晶体管沟道结构的探针的方法,该方法包括:制造场效应晶体管;进行制备以在场效应晶体管的栅电极的顶部生长碳纳米管;以及在场效应晶体管的栅电极的顶部产生碳纳米管。

著录项

  • 公开/公告号KR20060073765A

    专利类型

  • 公开/公告日2006-06-29

    原文格式PDF

  • 申请/专利权人 POSTECH FOUNDATION;

    申请/专利号KR20040112159

  • 发明设计人 MOON WON KYU;LIM GEUN BAE;LEE SANG HOON;

    申请日2004-12-24

  • 分类号H01L29/78;

  • 国家 KR

  • 入库时间 2022-08-21 21:25:20

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