Characterization and Physics-Based Modeling of Electrochemical Memristors.

摘要

We have developed and validated device- and circuit-level models that describe the underlying physics governing the electrical behavior of electrochemical memristors (PMCs). Devices are modeled through numerical solutions to equations that capture charge transport and reaction properties in solid state electrolyte materials. Numerical simulations enable a physics-based characterization of the dynamics of filament formation and dissolution in ion conducting films that result from electrical or optical stress. Model parameters and electrical characteristics were obtained from and validated with experiments on test structures designed and fabricated during the program. Circuit applications that use memristors in a conventional integrated circuit framework have been designed and simulated with derived compact models. The program has led to significant advances in our understanding of the physics of memristor operation, expanded our understanding of the application space for the technology, and supported the identification of potential radiation threats, of which there seem to be few except for some single event effect susceptibility.