Production Engineering Measure. Transistor (Wx-4001), Logic Gate (Wm-201), Flip-Flop (Wm-202), AC Binary (Wm-213)

摘要

Wire-Bonding-an evaluation test performed on two different processing techniques for the elimination of plague formation at bond with the exception of the life test at 125C was completed. The available test results indicate that the all aluminum system (Al-Al-Al) performed better than the Al-Al-Au combination. An experiment was performed, whereby the dielectric strength of the oxide created by the standard boron tribromide diffusion was compated with that obtained with trimethyl borate (B(OCH3)3). A double coating and exposure technique proved to increase the temperature stress resistance of the devices in the 25C to 200C temperature range. Encapsulation studies included an evaluation program to monitor the quality of the flat packages. Reliability tests were performed utilizing computer prams.