Investigation and Study of Rare-Earth-Doped Silicon

摘要

A summary is given of work performed toward the objective of producing single silicon crystals doped with rare-earth elements and with uranium. Crystals were grown by various modifications of the Czochralski method, and the apparatus and techniques are described. The properties, principally the resistivity profiles, and details of doping and of growth, are included for each crystal that was grown. (Author)