Luminescence Properties of Rare-Earth-Doped Thiosilicate Phosphors on Silicon Substrate

摘要

The luminescence properties of rare-earth-doped thiosilicate phosphors are reported. These thiosilicate materials are fabricated in phosphor layers on silicon substrates. For Eu~(2+)-doped calcium thiosilicate, yellow (560 nm) and red (650 nm) bands are obtained in the photoluminescence spectrum, which is almost the same as that for the corresponding powder sample. The energy transfer efficiency from Eu~(2+) to Er~(3+) in Eu_2SiS_4:Er~(3+) on Si substrates is improved by optimization of the annealing conditions. In addition, the insulation of electroluminescence devices using BaSi_2S_5:Eu~(2+) on silicon-on-insulator substrates is improved using a high-dielectric-constant polymer as a transparent insulating layer.