High Power Semiconductor Phase Shifting Devices

摘要

The report summarizes the efforts to investigate semiconductor phase shifting techniques in the L and S frequency bands. The summary describes analyses and experimental studies of two basic phase shifter circuit modes, the transmission phase shifter and the transmission-reflection phase shifter. In the latter class, both continuous and discrete increment phase control models are treated. Highest power and lowest insertion loss results were obtained using the transmission mode enhancing its usefulness in phased array radar. The transmission reflection circuit mode utilizing PIN diodes for phase control basically yields switchable time delay, and models were constructed which were operated to 48 kilowatts at L-band and 5 kilowatts at S-band. Continuous phase control for low power applications was demonstrated at L and S-bands with a figure of merit of approximately 250 degrees phase shift per decibel of insertion loss per kilo-megacycle of operation using the transmission reflection mode. These used 180 Kmc cut-off frequency varactors as phase control elements. (Author)